Our group studies the process-structure-property relations in ferroelectric, dielectric, and ion-conducting oxides. The group primarily focuses on thin films prepared by a wide range of methods, including: pulsed laser ablation, sputtering, atomic layer deposition, and chemical solution deposition. We use the linakges between process, structure, and properties to enable materials integration resulting in novel electronic, thermal, or optical functionality and devices. This includes demonstration of active phonon transport regulation using ferroelectrics, developing new methods to identify metastable phases, property enhancement via improved material integration, and fast ion conducting thin films for energy storage, among others.
Bio: Jon Ihlefeld is a Professor in the Materials Science and Engineering and Electrical and Computer Engineering Departments at the University of Virginia. He joined UVA in 2017 as an Associate Professor following a career at Sandia National Laboratories in Albuquerque, NM where he held positions of Senior, Principal, and Distinguished Member of the Technical Staff in the Materials Science and Engineering Center. He is the Vice-President for Ferroelectrics for the IEEE, a past Chair of the Electronics Division of The American Ceramic Society, an Associate Editor of the Journal of The American Ceramic Society, a past Principal Editor of the Journal of Materials Research, and serves on the Editorial Advisory Board for Applied Physics Letters.
Education
B.S., Materials Engineering, Iowa State University, 2002
M.M.S.E., North Carolina State University, 2005
Ph.D., Materials Science and Engineering, North Carolina State University, 2006
Post-Doc at The Pennsylvania State University, 2006-2008
Research Interests
Ferroelectric Materials and Properties
Dielectrics and Integration
Ion Conducting Ceramics and Thin Films
Complex Oxides
Thin Film Processing Science
Thermal Transport
Selected Publications
Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films, ACS Nano, 17 (23), 23944-23954 (2023).
S.T. Jaszewski, S. Calderon, B. Shrestha, S.S. Fields, A. Samanta, F.J. Vega, J.D. Minyard, J.A. Casamento, J-P. Maria, N.J. Podraza, E.C. Dickey, A.M. Rappe, T.E. Beechem, and J.F. Ihlefeld
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films, Advanced Electronic Materials, 2200601 (2022).
Shelby S. Fields, Truong Cai, Samantha T. Jaszewski, Alejandro Salanova, Takanori Mimura, Helge H. Heinrich, M. David Henry, Kyle P. Kelley, Brian W. Sheldon, and Jon F. Ihlefeld.
Impact of Oxygen Content on Phase Constitution and Ferroelectric Behavior of Hafnium Oxide Thin Films Deposited by Reactive High-Power Impulse Magnetron Sputtering, Acta Materialia (2022).
Samantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Alejandro Salanova, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, James M. Howe, and Jon F. Ihlefeld, et al.
Compositional and Phase Dependence of Elastic Modulus of Crystalline and Amorphous Hf1-xZrxO2 Thin Films, Applied Physics Letters, 118, 012903 (2021).
Shelby S. Fields, David H. Olson, Samantha T. Jaszewski, Chris M. Fancher, Sean W. Smith, Diane A. Dickie, Giovanni Esteves, M. David Henry, Paul S. Davids, Patrick E. Hopkins, and Jon F. Ihlefeld.
Phase Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films, ACS Applied Materials and Interfaces, 12(23), 26577-26585 (2020).
Shelby S. Fields, Sean W. Smith, Philip J. Ryan, Samantha T. Jaszewski, Ian A. Brummel, Alejandro Salanova, Giovanni Esteves, Steve L. Wolfley, Michael D. Henry, Paul S. Davids, and Jon F. Ihlefeld.
Voltage Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin Film Membranes, ACS Applied Materials and Interfaces, 10(30) 25493–25501 (2018).
Brian M. Foley, Margeaux Wallace, John T. Gaskins, Elizabeth A. Paisley, Raegan L. Johnson-Wilke, Jong-Woo Kim, Philip J. Ryan, Susan Trolier-McKinstry, Patrick E. Hopkins, and Jon F. Ihlefeld.
Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films, Applied Physics Letters, 110, 072901 (2017).
S. W. Smith, A. R. Kitahara, M. A. Rodriguez, M. D. Henry, M. T. Brumbach, and J. F. Ihlefeld.
Oxygen partial pressure dependence of thermoelectric power factor in polycrystalline n-type SrTiO3: Consequences for long term stability in thermoelectric oxides, Applied Physics Letters, 110, 173901 (2017).
Peter A. Sharma, Harlan J. Brown-Shaklee, and Jon F. Ihlefeld.
Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations, Journal of the American Ceramic Society, 99(8), 2537-2557 (2016).
Jon F. Ihlefeld, David T. Harris, Ryan Keech, Jacob L. Jones, Jon-Paul Maria, and Susan Trolier-McKinstry.
Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films, Nano Letters, 15(3), 1791-1795 (2015).
Jon F. Ihlefeld, Brian M. Foley, David A. Scrymgeour, Joseph R. Michael, Bonnie B. McKenzie, Douglas L. Medlin, Margeaux Wallace, Susan Trolier-McKinstry, and Patrick E. Hopkins.
Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content, Applied Physics Letters, 107, 102101 (2015).
Elizabeth A. Paisley, Michael Brumbach, Andrew A. Allerman, Stanley Atcitty, Albert G. Baca, Andrew M. Armstrong, Robert J. Kaplar, and Jon F. Ihlefeld.
Chemically Homogeneous Complex Oxide Thin Films Via Improved Substrate Metallization, Advanced Functional Materials, 22(11) 2295-2302 (2012).
Christopher T. Shelton, Paul G. Kotula, Geoff L. Brennecka, Peter G. Lam, Kelsey E. Meyer, Jon-Paul Maria, Brady J. Gibbons, and Jon F. Ihlefeld.
